2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

2N7002K-AU

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays

2N7002KB

MainProductCharacteristics

2N7002KB

60VN-ChannelMOSFET

Description Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinpowerswitchingapplicationandawideva