N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2.5KV (HBM) • Halogen free available upon request by adding suffix -HF

文件：520.77 Kbytes 页数：3 Pages

MCC

丝印：72K；Package：SOT-723；N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV

文件：198.59 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：RK；Package：SOT-723；N-Channel Mosfet

Application ® Load/Power Switching ® Interfacing Switching © Logic Level Shift

文件：1.85739 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.04155 Mbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：C7；Package：DFN1110D-3；60 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Side wettable flanks for optical

文件：281.49 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：SK；Package：SC70；Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70

FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected

文件：119.25 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：461.13 Kbytes 页数：7 Pages

RECTRON

丽正国际