N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

文件：1.09262 Mbytes 页数：4 Pages

YFWDIODE

佑风微

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switchi

文件：659.22 Kbytes 页数：5 Pages

WEITRON

Channel Enhancement MOSFET

FEATURES • Low Gate Charge for Fast Switching. • ESD Protected Gate. APPLICATIONS • Power Management Load Switch • ESD Protected:1500V • Easily designed drive circuits

文件：169.65 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：72K；Package：SOT-523；N-Channel Enhancement Mode Field Effect Transistor

Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV

文件：716.72 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：219.28 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：219.28 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：219.28 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：106.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：103.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：219.28 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司