丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-323；N-Channel Mosfet

FEATURES Rds(on) ≤ 3Ω @Vgs=10V Rds(on) ≤ 4Ω @Vgs=4.5V

文件：191.87 Kbytes 页数：5 Pages

RECTRON

丽正国际

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 页数：5 Pages

RECTRON

丽正国际

Advanced MOSFETprocess technology

Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description It utilizes the latest

文件：382.2 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features V DS = 60V,ID = 0.34A RDS(ON)

文件：427.5 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features •Low on resistance RDS(ON)•Low gate threshold voltage•Low input capacitance•ESD protected up to 2KV•-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

文件：419.51 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

MOSFET

Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

文件：575.11 Kbytes 页数：6 Pages

COMCHIP

典琦

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：372.74 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Operate

文件：256.12 Kbytes 页数：4 Pages

HY

虹扬科技

丝印：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Re

文件：183.25 Kbytes 页数：5 Pages

PANJIT

強茂