N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：372.74 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

Panar MOSFETs, US6, 60V, 0.3A

• ESD Protected 2000V.(Human Body Model)\n• High density cell design for low RDS(ON)\n• Voltage controlled small signal switch\n• High-speed line driver\n• Low-side loadswitch;

KEC

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Re

文件：183.25 Kbytes 页数：5 Pages

PANJIT

強茂

Dual N-Channel MOSFET

Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 gr

文件：152.56 Kbytes 页数：4 Pages

WEITRON

Dual N-Channel Small Signal MOSFET

FEATURES ● Low on-resistance ● Fast switching Speed ● Low-voltage drive ● Easily designed drive circuits ● ESD protected:2000V MECHANICAL DATA ● Case: SOT-363 ● Case Material-UL flammability rating 94V-0 ● Terminals: Solderable per MIL-STD-202, Method 208 ● Weight: 0.006 grams(approx.)

文件：431.3 Kbytes 页数：2 Pages

SECOS

喜可士