Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：103.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：27；Package：SOT-523；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays

文件：117.39 Kbytes 页数：5 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：158.48 Kbytes 页数：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：158.48 Kbytes 页数：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays

文件：150.91 Kbytes 页数：5 Pages

PANJIT

強茂

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V.(Human Body Model) • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Suffix U : Qualified to AEC-Q101. ex) 2N7002KU-RTK/HU

文件：370.33 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

60V N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：689.54 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

文件：425.76 Kbytes 页数：3 Pages

MCC

丝印：72K；Package：SOT-563；Plastic-Encapsulate MOSFETS

FEATURE  High density cell design for LowRDS(on)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected APPLICATION  Load Switch for Portable Devices  DC/DC Converter

文件：1.1607 Mbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：819.8 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司