丝印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：561.25 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

丝印：WB；Package：SOT-346；High-gain Amplifier Transistor (32V, 0.3A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：72.34 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：WB；Package：SOT-346；High-gain Amplifier Transistor (32V , 0.3A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：86.99 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：WB；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：WB；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：WB；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：218.05 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：WB；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4~75V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

文件：81.93 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：WB；Package：SOD-123；SURFACE MOUNT ZENER DIODE

Features • Planar Die Construction • 500mW Power Dissipation • General Purpose, Medium Current • Ideally Suited for Automated Assembly Processes • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3 & 4) • Qualified to AEC-

文件：73.25 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：WB；Package：SOD-123；SURFACE MOUNT ZENER DIODE

Features • Planar Die Construction • 500mW Power Dissipation • General Purpose, Medium Current • Ideally Suited for Automated Assembly Processes • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3 & 4) • Qualified to AEC-

文件：79.14 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：WB；Package：SOT-23；300mW Surface Mount Zener Diodes

Features • Silicon Planar Power Zener Diodes • 350mW Power Dissipation • Standard Zener Voltage Tolerance is ± 5 • Ideally Suited for Automated Assembly Processes • High temperature soldering guaranteed: 260 °C / 10 seconds in reflow soldering process • RoHS Compliant

文件：153.69 Kbytes 页数：5 Pages

TAITRON