N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：237.13 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

文件：63.29 Kbytes 页数：3 Pages

DIODES

美台半导体

60 V, 300 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology Features and benefits ● Suitable for logic level gate drive sources ● Very fast switching ● Surface-mounted package ● Trench MOSFET technology Applications ● Log

文件：159.74 Kbytes 页数：13 Pages

恩XP

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

文件：154.02 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：561.25 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

丝印：7002A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：603.85 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Cha

文件：154.02 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

文件：148.68 Kbytes 页数：6 Pages

UTC

友顺

丝印：7002A.；Package：SOT-23；MOSFET

Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

文件：573.64 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：NJ；Package：SOT-23；N-Channel Enhancement MOSFET

High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

文件：965.81 Kbytes 页数：5 Pages

YFWDIODE

佑风微