| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2N7002_ | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODESDiodes Incorporated 达尔科技 |  | |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage | DIODESDiodes Incorporated 达尔科技 | | ||
60 V, 300 mA N-channel Trench MOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOSFETtechnology Featuresandbenefits ●Suitableforlogiclevelgatedrivesources ●Veryfastswitching ●Surface-mountedpackage ●TrenchMOSFETtechnology Applications ●Log | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | ||
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES •HighdensitycelldesignforlowRDS(ON). •Voltagecontroolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式会社 |  | ||
N-Channel Enhancement Mode Field Effect Transistor ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 |  | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •N-Cha | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-state resistance(RDS(ON))yetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •N-Cha | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
N-Channel Enhancement MOSFET HighSpeedSwitchingApplications ESDprotectedgate LowON-resistance RDS(on)=2.8Ω(typ.)(@VGS=10V) RDS(on)=3.1Ω(typ.)(@VGS=5V) RDS(on)=3.2Ω(typ.)(@VGS=4.5V) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features •N-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •ESDProtectedupto1kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Stand | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features •N-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •ESDProtectedupto1kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Stand | DIODESDiodes Incorporated 达尔科技 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Features •N-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •ESDProtectedupto1kV •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101Stand | DIODESDiodes Incorporated 达尔科技 | | ||
SOT- 23 Plastic-Encapsulate MOSFETS FEATURE *HighdensitycelldesignforlowRDS(ON) *Voltagecontrolledsmallsignalswitch *Ruggedandreliable *Highsaturationcurrentcapability | UMWUMW 友台友台半导体 |  | ||
60 V, 350 mA N-channel Trench MOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotecti | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | ||
60V N-Channel Enhancement Mode MOSFET Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V) | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | ||
60 V, 350 mA N-channel Trench MOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpr | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | ||
60V N-Channel Mosfet Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  |
产品属性
- 产品编号：
2N7002E
- 制造商：
ANBON SEMICONDUCTOR (INT'L) LIMITED
- 类别：
分立半导体产品 > 晶体管 - FET，MOSFET - 单个
- 包装：
管件
- 描述：
N-CHANNEL SMD MOSFET ESD PROTECT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 | ||
12+ |
SOT-232 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
PANJIT |
1401+ |
SOT23 |
8450 |
现货-ROHO |
询价 | ||
DIODES |
2022 |
SOT23-3 |
841 |
原厂原装正品,价格超越代理 |
询价 | ||
PHILIPS |
2724 |
原装正品现货供应 |
询价 | ||||
PyramisCorp |
1305+ |
SOT-23 |
12000 |
询价 | |||
Yeashin |
23+ |
SOT23 |
12000 |
全新原装优势 |
询价 | ||
NXP |
23+ |
SOT23 |
12300 |
询价 | |||
PANJIT強 |
13+ |
9425 |
原装分销 |
询价 | |||
PHILIPS |
16+ |
TO-251 |
2147 |
原装现货假一罚十 |
询价 |
相关规格书
更多- 2N7002_D87Z
- 2N7002-7
- 2N7002-7-GIGA
- 2N7002A-RTK/P
- 2N7002BK,215
- 2N7002BKMB,315
- 2N7002BKS,115
- 2N7002BKT,115
- 2N7002BKW,115
- 2N7002CK,215
- 2N7002DW_R1_00001
- 2N7002DW-7-F/BKN
- 2N7002DWH63=WR1
- 2N7002DWH6327XT
- 2N7002DWQ-7-F
- 2N7002E
- 2N7002E-7-F
- 2N7002E-T1
- 2N7002ET1G
- 2N7002E-T1-GE3
- 2N7002F,215
- 2N7002-G
- 2N7002H6327XTSA2
- 2N7002K,215
- 2N7002K_R1_00001
- 2N7002K-7/BKN
- 2N7002K-RTK/P
- 2N7002K-T1-E3
- 2N7002KT1G
- 2N7002K-TP
- 2N7002L
- 2N7002LT1G
- 2N7002LT3G
- 2N7002MTF
- 2N7002P,215
- 2N7002P.215
- 2N7002PS,115
- 2N7002PT,115
- 2N7002PW,115
- 2N7002R-02-7
- 2N7002T
- 2N7002-T1
- 2N7002-T1-E3-CUTTAPE
- 2N7002T-7-F
- 2N7002TA
相关库存
更多- 2N7002_R1_00001
- 2N7002-7-F
- 2N7002A-7
- 2N7002BK,215
- 2N7002BKM,315
- 2N7002BKMB.315
- 2N7002BKS,115
- 2N7002BKV,115
- 2N7002CK,215
- 2N7002DW
- 2N7002DW-7-F
- 2N7002DWA-7
- 2N7002DWH6327
- 2N7002DWH6327XTSA1
- 2N7002DW-TP
- 2N7002E,215
- 2N7002EPT
- 2N7002E-T1-E3
- 2N7002ET1G
- 2N7002F,215
- 2N7002G
- 2N7002H6327
- 2N7002K
- 2N7002K/BKN
- 2N7002K-7
- 2N7002KDW
- 2N7002KT/R
- 2N7002KT1G
- 2N7002K-T1-GE3
- 2N7002KW
- 2N7002LT1
- 2N7002LT1G/BKN
- 2N7002LT3G
- 2N7002P,215
- 2N7002P,235
- 2N7002PS,115
- 2N7002PS,125
- 2N7002PV,115
- 2N7002PW,115
- 2N7002S
- 2N7002T/BKN
- 2N7002-T1-E3
- 2N7002-T1-GE3
- 2N7002T-7-F/BKN
- 2N7002-TP
