丝印：D3；400mW Surface Mount Switching Didoe

Specification Features: ■ Fast Switching Device (TRR

文件：1.47481 Mbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：D3；Package：SOT-23；Surface mount switching diode

FEATURES ● Low forward voltage VF=0.92V(typ). ● Small total capacitance:CT=2.2pF(typ). ● Fast reverse recovery time:trr=1.6ns(typ). APPLICATIONS ● High speed switching application.

文件：370.5 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：D3；Package：SOT-23；High Speed Switching Diode

■ Features ● Fast reverse recovery time:trr=1.6ns(typ.) ● Diode capacitance :Cd=2.2pF(typ.)

文件：323.12 Kbytes 页数：2 Pages

YFWDIODE

佑风微

丝印：D3；Package：SOT-23；Switching DIODES

FEATURES • Low forward voltage : VF(3)=0.92V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

文件：295.05 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

丝印：D3；Package：SOT-23；SWITCHING DIODE

FEATURES Low forward voltage Fast reverse recovery time

文件：591.56 Kbytes 页数：4 Pages

SY

顺烨电子

丝印：D3；Package：SOT1268；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench

文件：317.65 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D3；Package：SOT883；PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23.

文件：362.92 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D3；Package：SOT883；PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. APPLICATIONS •General purpose small signal DC •Low and medium frequency AC applications •Mobile communications, digital (still) cameras, PDAs, PCMCIA car

文件：362.91 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D3；Package：SOT23；NPN general purpose transistors

FEATURES •Low current (100 mA) •Low voltage (32 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30.

文件：318.26 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D3；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 页数：4 Pages

LUGUANG

鲁光电子