EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

DTB713ZandDTC114EAarehousedindependentlyinaEMT6package. Features 1)DTr1:PNPdigitaltransistor DTr2:NPNdigitaltransistor 2)MountingpossiblewithEMT3automaticmountingmachines. Applications DC/DCconverter Motordriver

EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

TZT43AW

Marking：D30；Package：SOT-23；SMD Zener

CBTD3306PW

Marking：D306；Package：SOT530-1；Dual bus switch with level shifting

1.Generaldescription TheCBTD3306dualFETbusswitchfeaturesindependentlineswitches.Eachswitchisdisabled whentheassociatedoutputenable(nOE)inputisHIGH. TheCBTD3306ischaracterizedforoperationfrom-40°Cto+85°C. 2.Featuresandbenefits •Designedtobeusedin5Vt

FKD3018B

Marking：D3018B；Package：TO252；N-Ch 30V Fast Switching MOSFETs

Description TheFKD3018Bisthehighcelldensitytrenched N-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronous buckconverterapplications. TheFKD3018BmeettheRoHSandGreen Productrequirement,100EASguaranteed withfullfunctionreliabilityapprove

IDW30G65C5

Marking：D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1Description ThinQ!™Generation5representsInfineonleadingedgetechnologyforthe SiCSchottkyBarrierdiodes.Thankstothemorecompactdesignandthinwafer technology,thenewfamilyofproductsshowsimprovedefficiencyover allloadconditions,resultingfromboththeimprovedtherma

IDWD30G120C5

Marking：D3012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Noreverserecoverycurrent/noforwardrecovery Highsurgecurrentcapability Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Specifieddv/dtruggedness Pb-freeleadplating;RoHS

PJD30N04S-AU

Marking：D30N04S；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD30N15_L2_00001

Marking：D30N15；Package：TO-252AA；150V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@5A