74LVC1G373DCKRG4

Marking：D35；Package：SC70；SN74LVC1G373 Single D-Type Latch With 3-State Output

1Features 1•AvailableintheTexasInstruments NanoFree™Package •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •ProvidesDownTranslationtoVCC •Maxtpdof4nsat3.3V •LowPowerConsumption:10-μA MaximumICC •±24-mAOutputDriveat3.3V •IoffSupportsPartia

SN74LVC1G373DCKR

Marking：D35；Package：SC70；SN74LVC1G373 Single D-Type Latch With 3-State Output

1Features 1•AvailableintheTexasInstruments NanoFree™Package •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •ProvidesDownTranslationtoVCC •Maxtpdof4nsat3.3V •LowPowerConsumption:10-μA MaximumICC •±24-mAOutputDriveat3.3V •IoffSupportsPartia

LC0534DT4

Marking：D35；Package：SOT-143；LOW CAPACITANCE BIDIRECTIONAL TVS DIODE ARRAY

PJD35N06A_L2_00001

Marking：D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD35N06A-AU_L2_000A1

Marking：D35N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD35P03_L2_00001

Marking：D35P03；Package：TO-252AA；30V P-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@-10V,ID@-8A

STD35NF06LT4

Marking：D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

Description ThisPowerMOSFEThasbeendevelopedusing STMicroelectronics’uniqueSTripFETprocess, whichisspecificallydesignedtominimizeinput capacitanceandgatecharge.Thisrendersthe devicesuitableforuseasprimaryswitchin advancedhigh-efficiencyisolatedDC-DC converters

HLDD35P06

Marking：D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

HLDD35P06

Marking：D35P06；Package：TO-252；P-Channel Enhancement Mode Power MOSFET