2N7002DW资料datasheet下载原装现货第4页-114ic电子网

首页 >2N7002_>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2N7002BKS	文件：931.08 Kbytes Page：16 Pages	丝印：ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog 文件：931.08 Kbytes 页数：16 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKS	文件：298.18 Kbytes Page：15 Pages	丝印：ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog 文件：298.18 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKS_V01	文件：298.18 Kbytes Page：15 Pages	60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog 文件：298.18 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKT	文件：460.37 Kbytes Page：17 Pages	丝印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote 文件：460.37 Kbytes 页数：17 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKT	文件：361.32 Kbytes Page：16 Pages	丝印：Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFETtechnology E 文件：361.32 Kbytes 页数：16 Pages	恩XP	恩XP
2N7002BKV	文件：379.26 Kbytes Page：16 Pages	丝印：ZG；Package：SOT-666；60 V, 340 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFETtechnology 文件：379.26 Kbytes 页数：16 Pages	恩XP	恩XP
2N7002BKV	文件：281.69 Kbytes Page：14 Pages	丝印：ZG；Package：SOT666；60 V, 340 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD 文件：281.69 Kbytes 页数：14 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKV	文件：945.69 Kbytes Page：3 Pages	60V Dual N-Channel Enhancement Mode MOSFET Features ● Fast switching ● Green Device Available ● Suit for 1.5V Gate Drive Applications 文件：945.69 Kbytes 页数：3 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
2N7002BKW	文件：286.36 Kbytes Page：15 Pages	丝印：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD 文件：286.36 Kbytes 页数：15 Pages	NEXPERIA 安世	NEXPERIA
2N7002BKW	文件：724.88 Kbytes Page：16 Pages	丝印：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro 文件：724.88 Kbytes 页数：16 Pages	NEXPERIA 安世	NEXPERIA

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技术参数

Automotive Compliant PPAP：
On Request*
Polarity：
N+N
ESD Diodes：
No
VDS：
60 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.115 A
PD @ TA = +25°C：
0.3 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
VGS (th) Max：
2 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT363

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	2N7002DW	FAIRCHILD/仙童	25+	SOT363	154708	明嘉莱只做原装正品现货	询价
中天科工半导体（深圳）有限公司	2N7002DW	FAIRCHILD/仙童	25+	SOT-363	38962	FAIRCHILD/仙童全新特价2N7002DW即刻询购立享优惠#长期有货	询价
深圳市河锋鑫科技有限公司	2N7002DW	FAIRCHILD/仙童	2020+PB	SOT-363	3750	原装正品可含税交易	询价
深圳庞田科技有限公司	2N7002DW	CJ/长电	2023+	SC70-6SOT-363	15000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市天芯威科技有限公司	2N7002DW	ON/安森美	23+	N/A	25850	新到现货,只有原装	询价
深圳市讯顺达科技有限公司	2N7002DW	Slkor/萨科微	24+	SOT-363	50000	Slkor/萨科微一级代理,价格优势	询价
深圳市东来宝电子科技有限公司	2N7002DW	DIODES/美台	24+	SOT363	963000	郑重承诺只做原装进口现货	询价
深圳市坤融电子科技有限公司	2N7002DW	DIODES/美台	2025+	SOT-363	5000	原装进口价格优请找坤融电子!	询价
深圳市得捷芯城科技有限公司	2N7002DW	ON(安森美)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市高捷芯城科技有限公司	2N7002DW	ON(安森美)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价

更多2N7002_供应商更新时间2026-2-1 15:40:00

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