丝印：2N；Package：SOT-363；N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

文件：258.86 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：2N；Package：SC70-6；Field Effect Transistor - N-Channel, Enhancement Mode

Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：264.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：283.76 Kbytes 页数：9 Pages

INFINEON

英飞凌

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

文件：306.81 Kbytes 页数：6 Pages

UTC

友顺

丝印：K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

文件：66.24 Kbytes 页数：3 Pages

DIODES

美台半导体

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363

文件：142.59 Kbytes 页数：3 Pages

SECOS

喜可士

SOT-363 Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：3.88809 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

丝印：K72；Package：SOT-363；Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：2.10736 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-Channel MOSFET

Features High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications

文件：1.169 Mbytes 页数：4 Pages

EVVOSEMI

翊欧

Plastic-Encapsulated Transistors

MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：114.22 Kbytes 页数：1 Pages

TEL