N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

文件：419.09 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

文件：1.00502 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

文件：152.76 Kbytes 页数：3 Pages

ZSELEC

淄博圣诺

N-CHANNEL ENHANCEMENT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • Low On-Resistance • Fast Switching Speed • Low-voltage drive • Easily designed drive circuits • Pb-Free Package is available. • Can protect against static electricity 1KV when the product is in use. • AEC-Q101 Pass

文件：999.07 Kbytes 页数：4 Pages

YEASHIN

亚昕科技

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

文件：419.09 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere CONSTRUCTION * N-Channel Enhancement MARKING * 702E FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability.

文件：452.26 Kbytes 页数：5 Pages

CHENMKO

力勤

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

文件：461.34 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K7B；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

文件：461.34 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K7B；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

文件：461.34 Kbytes 页数：7 Pages

DIODES

美台半导体