N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel

文件：444.59 Kbytes 页数：6 Pages

DIODES

美台半导体

OptiMOS??Small-Signal-Transistor

OptiMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：287.45 Kbytes 页数：9 Pages

INFINEON

英飞凌

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel

文件：444.59 Kbytes 页数：6 Pages

DIODES

美台半导体

MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：482.07 Kbytes 页数：5 Pages

COMCHIP

典琦

60V N-Channel Mosfet

Application @® Direct logic-level interface: TTLUCMOS @® Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. @® Battery operated systems @® Solid-state relays

文件：4.22892 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：C7；Package：TSSOP6；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog

文件：294.8 Kbytes 页数：15 Pages

NEXPERIA

安世

60V Dual N-Channel Enhancement Mode MOSFET

Features © Fast switching | ® Green Device Available ® Suit for 1.5V Gate Drive Applications

文件：979.62 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：2N；Package：SC-70；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology •

文件：283.37 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6C；Package：SOT-323；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● ESD Protected:1000V

文件：1.33572 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：295.95 Kbytes 页数：7 Pages

NCEPOWER

新洁能