丝印：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features • 60V/0.2A, RDS (ON) =2500mΩ(Typ.)@VGS=10V RDS (ON) =2500mΩ(Typ.)@VGS=5V • ESD protected up to 2KV • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop C

文件：411.62 Kbytes 页数：8 Pages

RUICHIPS

锐骏半导体

丝印：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.11 Kbytes 页数：4 Pages

SECOS

喜可士

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：300.32 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

丝印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.19 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Advanced trench MOSFETprocess technology

Features and Benefits:  Advanced trench MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  HighPower and current handing capability  Fully Avalanche Rated  ESD Protection HBM ≥ 2KV Descr

文件：657.91 Kbytes 页数：6 Pages

SILIKRON

新硅能微电子

丝印：702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：283.89 Kbytes 页数：6 Pages

RECTRON

丽正国际

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体