丝印：7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2

文件：224.26 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：106.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：103.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：233.86 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

• Low on-resistance: 2 Ω • Low threshold: 2 V (typ.) • Low input capacitance: 25 pF • Fast switching speed: 25 ns • Low input and output leakage • TrenchFET® power MOSFET • 2000 V ESD protection

文件：1.0269 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 页数：3 Pages

UTC

友顺

TrenchMOS™ logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Logic level compatible n Very fast switching n Subminiature surface mount package n Gate-source ESD protection diodes

文件：347.49 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON).  Voltage controlled small signal switch.  Rugged and reliable.  High saturation current capability.  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.406 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

文件：461 Kbytes 页数：4 Pages

YFWDIODE

佑风微

N-Channel 60-V(D-S) MOSFET

General FEATURE ●High density cell design for Low RDS(on) ●Voltage controlled small signal switch ●Rugged and reliable ●High saturation current capability ●ESD protected 2KV HBM APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

文件：824.43 Kbytes 页数：5 Pages

TUOFENG

拓锋半导体