N Channel Enhancement Mode MOSFET

FEATURE ● 60V/0.50A, RDS(ON) =2Ω @VGS = 10V ● 60V/0.20A, RDS(ON) = 4Ω@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and Maximum DC current capability ● ESD capability: 2000V ● SOT-23 package design

文件：268.3 Kbytes 页数：7 Pages

STANSON

司坦森

丝印：72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 页数：5 Pages

TGS

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：1.49308 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

丝印：702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● HMB ESD protected (2000V) APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.40128 Mbytes 页数：5 Pages

CHENDA

辰达半导体

N-Channel Enhancement Mode MOSFET

Features ● 60V / 0.5A, RDS(ON) = 2.5 Ω @ VGS = 10V RDS(ON) = 2.5 Ω @ VGS = 4.5V ● SOT-23 for Surface Mount Package. Applications ● Direct Logic-level Interface: TTL/CMOS. ● Drivers: Relays, Lamps, Display, Transistor, etc ● Battery Operated Systems.

文件：463.82 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

文件：384.2 Kbytes 页数：5 Pages

HOTTECH

合科泰

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

文件：307.7 Kbytes 页数：1 Pages

SHENZHENSLS

三联盛

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● Load Switch for Portable Devices ● DC/DC Converter

文件：2.46889 Mbytes 页数：5 Pages

HDSEMI

海德半导体

丝印：7002；Package：SOT23；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

文件：1.01742 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子