N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：74.38 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：C7K；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2KV (HBM) • Marking : 72K • Halogen free available upon request by adding suff

文件：392.24 Kbytes 页数：7 Pages

MCC

丝印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：697.75 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：701.39 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：-2K；Package：SOT-23；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat

文件：94.25 Kbytes 页数：11 Pages

恩XP

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS @10V, IDS@ 500mA=2Ω RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Ope

文件：251.12 Kbytes 页数：4 Pages

HY

虹扬科技

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：41.11 Kbytes 页数：1 Pages

KEXIN

科信电子

N-CHannel Enhancement Mode MOSFET

High Speed Switching Application Features • ESD rating: 1000V (HBM) • Low On-Resistance: RDS(on)

文件：242.86 Kbytes 页数：6 Pages

KODENSHI

可天士

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：161.6 Kbytes 页数：5 Pages

PANJIT

強茂