N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit

文件：576.94 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

文件：532.57 Kbytes 页数：5 Pages

CHENMKO

力勤

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

文件：183.33 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH

文件：104.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

文件：194.4 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：-7F；Package：SOT-23；TrenchMOS Logic Level FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High-

文件：126.94 Kbytes 页数：11 Pages

PHI

PHI

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel

文件：444.59 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：M9；Package：SOT23；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC-Q101 quali

文件：283.29 Kbytes 页数：15 Pages

NEXPERIA

安世