丝印：-7F；Package：SOT-23；TrenchMOS Logic Level FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High-

文件：126.94 Kbytes 页数：11 Pages

PHI

PHI

丝印：-7F；Package：SOT-23；N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

文件：100.1 Kbytes 页数：12 Pages

恩XP

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

文件：100.1 Kbytes 页数：12 Pages

恩XP

60V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：96.25 Kbytes 页数：3 Pages

PANJIT

強茂

N-channel TrenchMOS logic level FET

恩XP

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Panjit

強茂