2N7002F

Marking：-7F；Package：SOT-23；TrenchMOS Logic Level FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-

2N7002FN3

60V N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7002-G

MOSFET

MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7002-G

MOSFET

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

2N7002H

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •N-Channel

2N7002H

60V,N-channelTrenchMOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •AEC-Q101quali

2N7002-HF

MOSFET

Features -Powerdissipation:0.35W