| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N7002H | N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel 文件:444.59 Kbytes 页数:6 Pages | DIODES 美台半导体 | DIODES | |
2N7002H | 丝印:M9;Package:SOT23;60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • AEC-Q101 quali 文件:283.29 Kbytes 页数:15 Pages | NEXPERIA 安世 | NEXPERIA | |
N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel 文件:444.59 Kbytes 页数:6 Pages | DIODES 美台半导体 | DIODES | ||
OptiMOS??Small-Signal-Transistor OptiMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • Avalanche rated • fast switching • Pb-free lead-plating; RoHS compliant • Halogen-free according to IEC61249-2-21 文件:287.45 Kbytes 页数:9 Pages | INFINEON 英飞凌 | INFINEON | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • N-Channel 文件:444.59 Kbytes 页数:6 Pages | DIODES 美台半导体 | DIODES | ||
MOSFET Features - Drive circuits can be simple. - Low on-resistance. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy. 文件:482.07 Kbytes 页数:5 Pages | COMCHIP 典琦 | COMCHIP | ||
60V N-Channel Mosfet Application @® Direct logic-level interface: TTLUCMOS @® Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. @® Battery operated systems @® Solid-state relays 文件:4.22892 Mbytes 页数:3 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
丝印:C7;Package:TSSOP6;60 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technolog 文件:294.8 Kbytes 页数:15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60V Dual N-Channel Enhancement Mode MOSFET Features © Fast switching | ® Green Device Available ® Suit for 1.5V Gate Drive Applications 文件:979.62 Kbytes 页数:3 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
丝印:2N;Package:SC-70;60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • 文件:283.37 Kbytes 页数:15 Pages | NEXPERIA 安世 | NEXPERIA |
技术参数
- Automotive Compliant PPAP:
No
- Polarity:
N
- ESD Diodes:
No
- VDS:
60 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
0.21 A
- PD @ TA = +25°C:
0.51 W
- RDS(ON) Max @ VGS (10V):
N/A mΩ
- RDS(ON) Max @ VGS (4.5V):
7500 mΩ
- RDS(ON) Max @ VGS (2.5V):
N/A mΩ
- RDS(ON) Max @ VGS (1.8V):
N/A mΩ
- VGS (th) Max:
3 V
- QG Typ @ VGS = 4.5V (nC):
0.3 nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
SOT23
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
银河 |
24+ |
SOT-23 |
83163 |
公司现货库存,有挂就有货,支持实单 |
询价 | ||
DIODES/美台 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
DIODES/美台 |
2447 |
SOT26 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
长晶CJ |
23+ |
SOT-23 |
360000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
DIODES |
两年内 |
NA |
3582 |
实单价格可谈 |
询价 | ||
NK/南科功率 |
2025+ |
SOT23 |
986966 |
国产 |
询价 | ||
GALAXY/银河微 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
DIODES/美台 |
22+ |
SOT-23 |
20000 |
只做原装 |
询价 | ||
Infineo |
25+ |
SOT-23 |
36000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Infineon |
24+ |
NA |
3220 |
进口原装正品优势供应 |
询价 |
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