| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages | PANJIT 強茂 | PANJIT |
技术参数
- Automotive Compliant PPAP：
On Request*
- Polarity：
N+N
- ESD Diodes：
No
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.115 A
- PD @ TA = +25°C：
0.3 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT363
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT363 |
154708 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT-363 |
38962 |
FAIRCHILD/仙童全新特价2N7002DW即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-363 |
3750 |
原装正品 可含税交易 |
询价 | ||
CJ/长电 |
2023+ |
SC70-6SOT-363 |
15000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
ON/安森美 |
23+ |
N/A |
25850 |
新到现货,只有原装 |
询价 | ||
Slkor/萨科微 |
24+ |
SOT-363 |
50000 |
Slkor/萨科微一级代理,价格优势 |
询价 | ||
DIODES/美台 |
24+ |
SOT363 |
963000 |
郑重承诺只做原装进口现货 |
询价 | ||
DIODES/美台 |
2025+ |
SOT-363 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
询价 |
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