N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere CONSTRUCTION * N-Channel Enhancement MARKING * 702E FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability.

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N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 AmpereCONSTRUCTION\n* N-Channel EnhancementMARKING\n* 702EFEATURE\n* Small surface mounting type. (SC-70/SOT-323)\n* High density cell design for low RDS(ON).\n* Suitable for high packing density.\n* Rugged and reliable.\n* High saturation current capability.\n* Voltag

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N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002EQ is suitable for automotive applications requi

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美台半导体

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit

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N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

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