丝印：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pro

文件：724.88 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

文件：286.36 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：X9-；Package：SOT-323；60 V, 310 mA N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFETtechnology „ E

文件：164.5 Kbytes 页数：16 Pages

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N-Channel 60-V (D-S) MOSFET

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VBSEMI

微碧半导体

60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD

文件：286.36 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：X9-；Package：SOT-323；60 V, 310 mA N-channel Trench MOSFET

文件：164.5 Kbytes 页数：16 Pages

PHI

飞利浦

60 V, 310 mA N-channel Trench MOSFET

General description\nN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Features and benefits\n„ Logic-level compatible\n„ Very fast switching\n„ Trench MOSFETtechnology\n„ ESD protection up t

恩XP

恩智浦

60V, Single N Channel MOSFET, RDS(ON) mΩ, SOT-323

•Very fast switching\n •Built-in G-S Protection Diode\n •Halogen and Antimony Free(HAF),RoHS compliant\n •Typical ESD Protection HBM Class 2;

Viitorsemi

微特

60 V, 310 mA N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• ESD protection up to 2 kV\n• AEC-Q101 qualified;

Nexperia

安世