2N7002BKW

Marking：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology ESDpro

2N7002BKW

Marking：X9；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOSFETtechnology •ESD

BAT42WS

Marking：X9；Package：SOD-323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltage •FastSwitching •Ultra-SmallSurfaceMountPackage

BD46332

Marking：X9；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46332G

Marking：X9；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46332G

Marking：X9；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-incoun

BZX84C33

Marking：X9；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

IMX9

Marking：X9；Package：SOT-26；General purpose transistor (isolated dual transistors)

Features 1)Two2SD2114KchipsinaSMTpackage. 2)MountingpossiblewithSMT3automaticmountingmachine. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure Epitaxialplanartype NPNsilicontransis

MM3Z2V7T1G

Marking：X9；Package：SC-76；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaverysmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:Approximately±5 •Wid

NX3DV3899GU

Marking：x9；Package：XQFN16；Dual double-pole double-throw analog switch

1Generaldescription TheNX3DV3899isadualdouble-poledouble-throwanalogdata-switchsuitableforuseasananalogordigital multiplexer/demultiplexer.Itconsistsoffourswitches,eachwithtwoindependentinput/outputs(nY0andnY1) andacommoninput/output(nZ).Thetwodigitalinput