60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：72K；Package：SOT-363；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP ca

文件：337.35 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - High saturation current capability. - ESD protected.

文件：511.93 Kbytes 页数：5 Pages

COMCHIP

典琦

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V.(Human Body Model) • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • High-speed line driver. • Low-side loadswitch.

文件：369.99 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：136.33 Kbytes 页数：5 Pages

PANJIT

強茂

N-Ch Small Signal MOSFET with Gate Protection

FEATURES z 2 kV ESD Protection z Lower On-resistance: 2 Ω z Low Threshold: 2 V (Typ.) z Low Input Capacitance: 25 pF z Fast Switching Performance: 25 nS z Low Input and Output Leakage APPLICATIONS z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoi

文件：680.74 Kbytes 页数：5 Pages

SECOS

喜可士

60V MOSFET

Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a

文件：573.13 Kbytes 页数：5 Pages

GOOD-ARK

固锝电子

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 页数：3 Pages

UTC

友顺

MOSFET

RoHS Device N-Channel Halogen Free Features -Small Signal MOSFET. -ESD protected: 1000V.

文件：129.61 Kbytes 页数：5 Pages

COMCHIP

典琦

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 页数：3 Pages

UTC

友顺