2N7002KDW

Marking：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

2N7002KDW-AU_R1_000A1

Marking：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@10V,ID@500mA

MMDT2227

Marking：K27；Package：SOT-363；COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features&Benefits •ComplementaryPairsOne2222AType(NPN) •One2907AType(PNP) •IdealforLowPowerAmplificationandSwitching •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3)

MMDT2227

Marking：K27；Package：SOT-363；Small Surface Mount Transistor

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPair. •Ultra-smallsurfacemountpackage. •One2222A-TypeNPN,One2907A-TypePNP APPLICATIONS •Idealforlowpoweramplificationandswitching.

MMDT2227

Marking：K27；Package：SOT-363；Complementary Pair

Features ComplementaryPair EpitaxialPlanarDieConstruction Ultra-SmallSurfaceMountPackage One2222A-TypeNPN,One2907A-TypePNP IdealforLowPowerAmplificationandSwitching

MMDT2227

Marking：K27；Package：SOT-363；Small Surface Mount Transistor

1.0SMB27A

Marking：K27A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB27CA

Marking：K27C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%