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TSB582IYDT

Marking:K2I;Package:SO8;200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TSB582IYQ2T

Marking:K2I;Package:DFN8;200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features •Widesupplyvoltage:4V-36V •Highoutputcurrent200mA •Rail-to-railoutput,lowrailinput •Gainbandwidthproduct:3.1MHz •Highslewrate:2V/μs •Internalthermalshutdown&outputcurrentlimiter •EnhancedRFnoiseimmunity •HightolerancetoESD:4kVHBM •Ex

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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