TSU112IYQ3T

Marking：K30；Package：DFN82x2；Automotive grade, nanopower (920 nA), high accuracy (150 關V) 5 V CMOS operational amplifier

TSU112IYST

Marking：K30；Package：MiniSO8；Automotive grade, nanopower (920 nA), high accuracy (150 關V) 5 V CMOS operational amplifier

1.0SMB30A

Marking：K30A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB30CA

Marking：K30C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

IKB30N65EH5

Marking：K30EEH5；Package：PG-TO263-3；TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode

IKB30N65ES5

Marking：K30EES5；Package：PG-TO263-3；TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode

IKW30N60H3

Marking：K30H603；Package：PG-TO247-3；IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

IKW30N65ET7

Marking：K30EET7；Package：PG-TO247-3；Low Loss Duopack: IGBT with Trench and Fieldstop technology