IKB30N65ES5

Discrete IGBT with Anti-Parallel Diode; • Very low VCEsatof 1.35 V at 25 °C, 20 % lower than TRENCHSTOP™ 5 H5\n• ICn=four times nominal current (100 °C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping\n• Maximum junction temperature Tvj=175 °C\n• Qualified according to JEDEC standards\n\n优势:\n• VCE(peak) clamping circuits not required\n• Suitable for use with single turn-on / turn-off gate resistor\n• No need for gate clamping components\n• Gate drivers with Miller clamping not required\n• Reduction in the EMI filtering needed\n• Excellent for paralleling\n;

The 650 V, 30 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.\n

IKB30N65ES5

丝印：K30EES5；Package：PG-TO263-3；TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode

IKW30N65ES5

highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode