650 V、40 A IGBT，带反并联二极管，采用 TO-263 封装

Infineon's 650 V, 40 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexi • Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5\n• ICn=four times nominal current (100°C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device a;

Infineon

英飞凌

High speed switching series 5th generation

文件：1.55021 Mbytes 页数：16 Pages

Infineon

英飞凌

TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode in fully isolated package

文件：1.52795 Mbytes 页数：15 Pages

Infineon

英飞凌

high Speed soft switching IGBT with full current rated RAPID 1 diode

文件：1.92495 Mbytes 页数：16 Pages

Infineon

英飞凌