IKB40N65ES5中文资料650 V、40 A IGBT，带反并联二极管，采用 TO-263 封装数据手册Infineon规格书

描述 Description

Infineon's 650 V, 40 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package copacked with full rated current Rapid 1 fast and soft anti parallel diode, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

特性 Features

• Very low VCEsatof 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
• ICn=four times nominal current (100°C Tc)
• Soft current fall characteristics with no tail current
• Symmetrical, low voltage overshoot
• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
• Maximum junction temperature Tvj= 175°C
• Qualified according to JEDEC standards

优势:
• VCE(peak) clamping circuits not required
• Suitable for use with single turn-on / turn-off gate resistor
• No need for gate clamping components
• Gate drivers with Miller clamping not required
• Reduction in the EMI filtering needed
• Excellent for paralleling