K38

型号：BSS138DW；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

•LowOn-Resistance:1.5 FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

K38

型号：BSS138DW；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowOn-Resistance:2.5Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

K38

型号：BSS138Q-7-F；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS138Qissuitableforautomotiveapplications requiring

K38

型号：BSS138WQ-13-F；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS138WQissuitableforautomotiveapplications requiringspecificchangecontrol;

K38

型号：BSS138WQ-7-F；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS138WQissuitableforautomotiveapplications requiringspecificchangecontrol;

K38

型号：DS38W；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

K38

型号：EM2378K；Package：DFN-3314；Transient Voltage Suppressors for ESD Protection

Features TVSworkingvoltage:5V Resistor:100Ω+/−20 TypicalCapacitance:20pF(VR=0V) Protectionandfilteringforfourlines Solid-statetechnology RoHSCompliant BidirectionalEMI/RFIfilterwithintegratedTVSforESDprotection Filterperformance:30dBminimumattenuation1.8GHzt

K38

型号：DSK38；Surface Mount Schottky Rectifiers

K38

型号：DSK38；Surface Mount Schottky Rectifiers

K3878

型号：2SK3878；TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.0Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) •Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)