丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

•Low On-Resistance:1.5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25313 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：K38；Package：SOT-363；Dual N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：2.25228 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

丝印：K38；Package：SOT23；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138Q is suitable for automotive applications requiring

文件：592.33 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：K38；Package：SOT-323；MOSFET

Features - Fast switching speed. - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Low input/output leakage.

文件：549.11 Kbytes 页数：5 Pages

COMCHIP

典琦

丝印：K38；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

文件：686.57 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K38；Package：SOT323；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138WQ is suitable for automotive applications requiring specific change control;

文件：686.57 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：K38；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53437 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K38；Package：DFN-3314；Transient Voltage Suppressors for ESD Protection

Features TVS working voltage: 5V Resistor: 100Ω +/− 20 Typical Capacitance: 20pF (VR = 0V) Protection and filtering for four lines Solid-state technology RoHS Compliant Bidirectional EMI/RFI filter with integrated TVS for ESD protection Filter performance: 30dB minimum attenuation 1.8GHz t

文件：2.47328 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K38；Surface Mount Schottky Rectifiers

文件：1.23106 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K38；Surface Mount Schottky Rectifiers

文件：1.23281 Mbytes 页数：3 Pages

JUXING

广东钜兴电子