丝印：K3A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA)

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