丝印：K3A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA)

文件：389.69 Kbytes 页数：9 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.29 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 2.5 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 900 V ;

Toshiba

东芝

??0 V, ??.0 A, Cool Single P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package

文件：145.15 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET Dual N?묬hannel

文件：138.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET Dual N?묬hannel

文件：138.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体