| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：K3R；Package：SOT-323；PNP Transistors ■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMSTA42 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Marking：K3R；Package：SOT-323；PNP Transistors ■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMSTA42 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
Marking：K3R；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors FEATURES SmallSurfaceMountPackage ComplementarytoMMSTA42 IdealforMediumPowerAmplificationandSwitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Marking：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor FEATURES ●Powerdissipation.(PC=200mW) ●Epitaxialplanardieconstruction. ●ComplementarytoMMSTA42. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalpurposeapplicationandswitchingapplication. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
Marking：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
Marking：K3R1A04PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS 1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=17.5nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS 1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：K3R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS 1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：K3R2A08QM；Package：TO-220SIS；MOSFETs Silicon N-channel MOS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Marking：K3R3E08QM；Package：TO-220；MOSFETs Silicon N-channel MOS | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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