丝印：K3R；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMSTA42

文件：1.23213 Mbytes 页数：2 Pages

KEXIN

科信电子

丝印：K3R；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMSTA42

文件：1.23213 Mbytes 页数：2 Pages

KEXIN

科信电子

丝印：K3R；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching

文件：1.86789 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Epitaxial planar die construction. ● Complementary to MMSTA42. ● Also available in lead free version. APPLICATIONS ● General purpose application and switching application.

文件：131.78 Kbytes 页数：2 Pages

BILIN

银河微电

丝印：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

文件：192.41 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：K3R1A04PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS

文件：497.25 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS

文件：626.49 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K3R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 99 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS =

文件：629.46 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K3R2A08QM；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

文件：490.55 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K3R3E08QM；Package：TO-220；MOSFETs Silicon N-channel MOS

文件：499.13 Kbytes 页数：9 Pages

TOSHIBA

东芝