PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMSTA42) • Ideal for Low Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Green Device (Notes 3 and 4)

文件：46.42 Kbytes 页数：2 Pages

DIODES

美台半导体

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMSTA42) • Ideal for Low Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Green Device (Notes 3 and 4)

文件：123.18 Kbytes 页数：3 Pages

DIODES

美台半导体

PNP Small Signal Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-small surface mount package •

文件：79.34 Kbytes 页数：2 Pages

MCC

丝印：K3R；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation.(PC=200mW) ● Epitaxial planar die construction. ● Complementary to MMSTA42. ● Also available in lead free version. APPLICATIONS ● General purpose application and switching application.

文件：131.78 Kbytes 页数：2 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Small Surface Mount Package ● Complementary to MMSTA42 ● Ideal for Medium Power Amplification and Switching

文件：404.07 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Small Surface Mount Package • Complementary to MMSTA42 • Ideal for Medium Power Amplification and Switching

文件：923.71 Kbytes 页数：4 Pages

JIANGSU

长电科技

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.86 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Plastic-Encapsulate Transistors

FEATURES Power dissipation.(PC=200mW) Epitaxial planar die construction. Complementary to MMSTA42.

文件：143.27 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.3 A Collector-base voltage V(BR)CBO: -310 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：58.79 Kbytes 页数：1 Pages

TEL

东电电子

丝印：K3R；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplification and Switching ● Complementary to MMSTA42

文件：1.23213 Mbytes 页数：2 Pages

KEXIN

科信电子