High-Efficiency DC-DC Converters

Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4

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丝印：K3R1A04PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS

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isc N-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 2.5mΩ (typ.) (VGS = 10 V) • Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and relia

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ISC

无锡固电

MOSFETs Silicon N-channel MOS

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 17.5 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS

文件：497.25 Kbytes 页数：9 Pages

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 82 A \nPower Dissipation PD 36 W \nDrain-Source voltage VDSS 40 V ;

Toshiba

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