MMBTA14

Marking：K3D；Package：SOT-23；NPN General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBTA63/MMBTA64). ●Highcurrentgain APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBTA14

Marking：K3D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypesAvailable(MMBTA63/MMBTA64) •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHig

MMBTA14

Marking：K3D；Package：SOT-23；NPN Darlington Amplifier Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBTA63/MMBTA64). ●Highcurrentgain. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

mmbta14

Marking：K3D；Package：SOT-23；NPN Silicon Epitaxial Planar Transistors

FEATURES DarlingtonAmplifier

HABTA14

Marking：K3D；Package：SOT-23；GENERAL PURPOSE TRANSISTOR

MMBTA14

Marking：K3D；Package：SOT-23；NPN Darlington Amplifier Transistor

MMBTA14

Marking：K3D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

IKN03N60RC2

Marking：K3DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features •VCE=600V •IC=3A •Verytightparameterdistribution •Operatingrangeof1to20kHz •Maximumjunctiontemperature150°C •Shortcircuitcapabilityof3μs •Humidityrobustdesign •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels:htt