600 V、3 A IGBT 分立器件，带反向导电驱动 2 个二极管，采用 SOT-223 封装

\n优势:\n• Low switching loses on competitive price\n• Improved controllability\n• Humidity ruggedness improvement\n• Easy to design in products – drop in SMD replacement in DPAK and SOT-223\n• High system realibility\n• Enable inverterization of Small Appliance application with SOT-223;

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丝印：K3DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features • VCE = 600 V • IC = 3 A • Very tight parameter distribution • Operating range of 1 to 20 kHz • Maximum junction temperature 150°C • Short circuit capability of 3 μs • Humidity robust design • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: htt

文件：1.43475 Mbytes 页数：17 Pages

INFINEON

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Package：TO-261-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：HOME APPLIANCES 14 PG-SOT223-3

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QFN

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上传：深圳市维尔达电子有限公司

QFN

INFINEON

英飞凌

上传：深圳市维尔达电子有限公司