IKN03N60RC2中文资料600 V, 3 A IGBT Discrete with Reverse Conducting Drive 2-diode in SOT-223 package数据手册Infineon规格书

特性 Features

优势:
• Low switching loses on competitive price
• Improved controllability
• Humidity ruggedness improvement
• Easy to design in products – drop in SMD replacement in DPAK and SOT-223
• High system realibility
• Enable inverterization of Small Appliance application with SOT-223

简介

IKN03N60RC2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKN03N60RC2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。