IKFW60N60DH3E数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

High speed switching 600 V third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a advanced isolation package for a best cost efficient solution.

特性 Features

• Short circuit withstand time 5μs at Tvj = 175°C
• Positive temperature coefficient in VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• Maximum junction temperature 175°C
• 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
• 100 % tested isolated mounting surface
• Pb-free lead plating; RoHS compliant
• Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

优势:
• No need to use isolation material and thermal grease
• 35% reduction in assembling time compared to standard TO-247 with Iso-foils
• Increased yield eliminating misalignments of isolation foils
• Up to 10°C lower Tc compared to standard TO-247 with isolation material
• Up to 20% Iout increase for higher power output
• Complete manufacturing process control
• Easy paralleling

简介

IKFW60N60DH3E属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKFW60N60DH3E晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。