IKFW75N60ET中文资料600 V、75 A IGBT，带反并联二极管，采用 TO-247 封装数据手册Infineon规格书

描述 Description

Infineon's 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
The new isolated package TO247 advanced isolation enables the highest power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

特性 Features

• Lowest VCEsatdrop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Very soft, fast recovery anti-parallel Emitter Controlled Diode with low EMI
• 2500 VRMSelectrical isolation, 50/60 Hz, t = 1 min
• 100 % tested isolated mounting surface
• Pb-free lead plating; RoHS compliant
• Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

优势:
• No need to use isolation material and thermal grease
• 35% reduction in assembling time compared to standard TO-247 with Iso-foils
• Increased yield eliminating misalignments of isolation foils
• Complete manufacturing process control
• Highest efficiency – low conduction and switching losses
• Very tight parameter distribution

简介

IKFW75N60ET属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKFW75N60ET晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。