IKFW60N60EH3数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

High speed switching 600 V, 60 A third generation TRENCHSTOP™ IGBT copacked with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
The new isolated package TO247 advanced isolation enables the highest power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

特性 Features

• Short circuit with stand time 5μs at Tvj= 175°C
• Positive temperature coefficient in VCEsat
• Low EMI
• Very soft, fast recovery anti-parallel diode
• Maximum junction temperature 175°C
• 2500 VRMSelectrical isolation, 50/60 Hz, t = 1 min
• 100 % tested isolated mounting surface
• Pb-free lead plating; RoHS compliant
• Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

优势:
• No need to use isolation material and thermal grease
• 35% reduction in assembling time compared to standard TO-247 with Iso-foils
• Increased yield eliminating misalignments of isolation foils
• Low switching and conduction losses
• Very good EMI behaviour
• Can be used with a small gate resistor for reduced delay time and voltage overshoot

简介

IKFW60N60EH3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKFW60N60EH3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。