NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A.

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FAIRCHILD

仙童半导体

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors ● High DC current gain ● High collector current ● Low collector-emitter saturation voltage

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INFINEON

英飞凌

DARLINGTON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC MMBTA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAX) = 350 mW

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UTC

友顺

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.

文件：65.95 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

丝印：K3D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (MMBTA63/MMBTA64) • Ideal for Medium Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for Hig

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DIODES

美台半导体

NPN Darlington Amplifier Transistor

Features • Operating And Storage Temperatures –55°C to +150°C • RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) • Capable of 225mWatts of Power Dissipation • Halogen free available upon request by adding suffix -HF • Marking: MMBTA13 ---K2D; MMBTA14 ---K3D • Lead Free Finish/RoHS Co

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MCC

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Darlington Amplifier

文件：389.44 Kbytes 页数：3 Pages

DAYA

大亚电器

TRANSISTOR (NPN)

FEATURES • Darlington Amplifier

文件：687.14 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

TRANSISTOR竊뉿PN竊

TRANSISTOR（ NPN） FEATURES Power dissipation PCM : 0.3W（ Tamb=25℃） Collector current ICM: 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150

文件：410.75 Kbytes 页数：4 Pages

JIANGSU

长电科技

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

文件：129.729 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体