丝印：K2P；Package：DFN1006-2；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features o Low operating voltage: 3.3V/ o Ultra low capacitance: 0.4pF (Typ) Ultra low leakage: nA level o Low clamping voltage o —IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV —IEC61000-4-4 (EFT) 40A (5/50ns) —IEC61000-4-5 (Lightning) 8A (8/20ps) o 2-pi

文件：2.58587 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：K2P；Package：DFN83x3WF；High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features • Low offset voltage: 3 mV max @ 25 °C • Low current consumption: 3.3 mA max / op @ 36 V • Wide supply voltage: 4.5 to 36 V • Gain bandwidth product: 52 MHz typ. @ 36 V • Unity gain stable • Rail-to-rail output • Output current: 40 mA typ. @ 36 V • Input common-mode voltage includ

文件：7.62524 Mbytes 页数：36 Pages

STMICROELECTRONICS

意法半导体

丝印：K2P；Package：DFN83x3WF；High bandwidth (52 MHz), rail-to-rail output, 36 V op amp

Features • Low offset voltage: 3 mV max @ 25 °C • Low current consumption: 3.3 mA max / op @ 36 V • Wide supply voltage: 4.5 to 36 V • Gain bandwidth product: 52 MHz typ. @ 36 V • Unity gain stable • Rail-to-rail output • Output current: 40 mA typ. @ 36 V • Input common-mode voltage includ

文件：7.91277 Mbytes 页数：38 Pages

STMICROELECTRONICS

意法半导体