NPN & PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA. FEATURES * Low VCE(SAT), VCE(SAT)=0.4V (typ.)@IC /IB=150mA/15mA, VCE(SAT)=1.4V (typ.) @IC/IB = 300mA/30mA * High collector

文件：127.45 Kbytes 页数：3 Pages

UTC

友顺

丝印：K27；Package：SOT-363；COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features & Benefits • Complementary Pairs One 2222A Type (NPN) • One 2907A Type (PNP) • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)

文件：53.17 Kbytes 页数：4 Pages

DIODES

美台半导体

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pairs One 2222A Type (NPN) One 2907A Type (PNP) • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Green Device (Note 3 and 4)

文件：201.49 Kbytes 页数：4 Pages

DIODES

美台半导体

SMD General Purpose NPN | PNP Transistors SMD Universal-NPN | PNP-Transistoren

Features Two complementary transistors in one package Compliant to RoHS (w/o exemption) REACH, Conflict Minerals 1)

文件：670.68 Kbytes 页数：3 Pages

Diotec

德欧泰克

NPN/PNP Small Signal Surface Mount Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Complementary Pair: NPN(2222A), PNP(2907A) • Ideal for Low Power Amplification and Switching • Ultra-small Surface Mount Package • Epoxy meets UL 94 V-0 flammability rating • Moisure S

文件：271.45 Kbytes 页数：3 Pages

MCC

丝印：K27；Package：SOT-363；Small Surface Mount Transistor

FEATURES • Epitaxial planar die construction. • Complementary Pair. • Ultra-small surface mount package. • One 2222A-Type NPN, One 2907A-Type PNP APPLICATIONS • Ideal for low power amplification and switching .

文件：181.55 Kbytes 页数：5 Pages

BILIN

银河微电

DUAL TRANSISTOR (NPNPNP)

DUAL TRANSISTOR (NPN+PNP) FEATURE ● Epitaxial planar die construction ● One 2222A NPN One 2907A PNP ● Ideal for power amplification and switching

文件：1.26571 Mbytes 页数：4 Pages

JIANGSU

长电科技

Multi-Chip Transistor

Features Power dissipation PCM : 0.2 W (Tamp.= 25°C) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55°C~ +150°C

文件：483.1 Kbytes 页数：6 Pages

SECOS

喜可士

Multi-Chip TRANSISTOR (NPN/PNP)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 200/-200 mA Collector-base voltage V(BR)CBO: 75/-60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：209.05 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

丝印：K27；Package：SOT-363；Complementary Pair

Features Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP Ideal for Low Power Amplification and Switching

文件：1.15275 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司