2N7002KC

Marking：72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

2N7002KC

Advanced MOSFETprocess technology

FeaturesandBenefits: AdvancedMOSFETprocesstechnology SpecialdesignedforPWM,loadswitchingand generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃operatingtemperature Description Itutilizesthelatest

2N7002KDU

NChannelMOSFETESDProtected2000V

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

2N7002KDW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

2N7002KDW

DualN-ChannelMOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

2N7002KDW

DualN-ChannelSmallSignalMOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

2N7002KDW

DualN-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

2N7002KDW

DualN-Channel60V(D-S)MOSFET

2N7002KDW

60VESDProtectedN-ChannelEnhancementModeMOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOperate

2N7002KDW

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest